Browse our complete portfolio organized by five core technology categories. Find the right components for your design.
Industry-leading V-NAND flash solutions spanning from automotive-grade UFS to consumer eMMC, delivering industry-best write endurance and sequential speeds.
High-bandwidth, low-power DRAM solutions for mobile, server, and AI accelerator applications. LPDDR5X achieves 8.5Gbps with 50% power reduction vs LPDDR5.
Purpose-built SSD controllers enabling next-gen NVMe SSDs with hardware-rooted security, advanced LDPC ECC, and smart power management for data center workloads.
Micron's 232-layer 3D NAND delivers best-in-class areal density and write performance for client and edge computing storage applications.
Industry's first 1β (1-beta) DRAM node in mass production, enabling 50% higher memory bandwidth and 25% better power efficiency for AI and high-performance computing.
Highly integrated µModule (micromodule) regulators combining MOSFETs, inductors, and controllers in a single BGA package. Silent Switcher technology eliminates EMI.
Monolithic and module DC-DCs renowned for ultra-high power density, fast transient response, and minimal EMI. Used in server PSUs, base stations, and motor drives worldwide.
From 16-bit 1MSPS SAR ADCs to 14-bit 10GSPS RF DACs, TI covers the full precision-to-high-speed data converter spectrum with proven reference designs.
From 100mA low-noise LDOs to multi-phase 500W DC-DCs, TI's power portfolio is unmatched in breadth. GaN-based high-power converters enable 3× power density improvement.
Purpose-built network processors for switches, routers, 5G RAN, and edge computing. Layerscape QorIQ family delivers wire-speed packet processing with hardware trust architecture.
Elite SiC MOSFETs and SiC Schottky barrier diodes for EV traction inverters, OBCs, and solar PV inverters. onSemi's SiC technology is IATF16949 certified for automotive production.
Automotive-grade 650V GaN HEMTs in Nexperia's proprietary Trench Gate technology, achieving 10× better figure-of-merit vs silicon SJ-MOSFETs in a highly reliable, AEC-Q101-qualified package.
Automotive-grade (AEC-Q200) inductors, common-mode chokes, and integrated magnetic components for EV OBC, DC-DC converters, and CAN/LIN bus EMI suppression.